Intelligent Semiconductor Laboratory

- DC Voltage: -5 V ~ 5 V
- Pulse frequency range: 1 mHz ~ 20 MHz
- Pulse width: 16 ns ~ 999.99 s
- Number of channels: 2
- Standard waveforms: Sine, Square, Pulse, Ramp, etc

 Voltage: 200 mV ~ 200 V
- Current: 1 nA ~ 1.5 A
- Pulse width: 200 us ~
- Pulse on & off level: 10 & 90 % of set pulse level

- Temperature range : R.T. ~ 1,000 ℃

- Temp. Over shoot: < 5.0 ℃

- Temp. Uniformity : < ± 1 %

- Ultimate Vacuum Pressure: Less than 5 x 10⁻³ Torr

- Single wafer processing with Loading unit

- Chamber Quartz Size : Φ 70 mm x 600 mm (L)

- Side Flange Size : Φ 120mm x 20mm (t), 2 set

- Ambient : Vac, Ar, O2, N2

- Eyepiece: WHN 10x / 22mm FOV

- Objectives: 5x, 10x, 20x, 50x

- Condenser: 1.1 N.A.

- Reflected Light: 6 Position Reflected Light Illuminator

- Light Source: Halogen

- Wavelength: 190 ~ 1100 nm
- Slit width : 1 nm

- Photometric noise: < 0.0002 A

- Spin coater
- Hot plate

- Chemical drain

- Substrate Size : Piece~6”
- Exposure Mode : Soft, Hard Contact , Vacuum Contact
- Exposure Optics : I, G, H-line 
- Alignment : Top Side Alignment

- Film Uniformity: Al₂O₃ ± 1% on the 200 x 200 mm² square substrate
- Base Pressure: < 5.0 x 10⁻³ [Torr]
- Number of MFC: Carrier & purge gas / 3EA & 2nd reactant gas / 2EA

- Materials: Al₂O₃, ZrO₂, HfO₂, HfZrOx

- Load Lock Type Sputtering system
- Substrate Heater Temp: ~ 400 ℃ (Max. 500 ℃)
- Gun Power Supply : RF 1 set, DC 1 set
- Process Gas : Ar, O₂, N₂
- Base Pressure : 5.0 x 10⁻⁶ torr  

- Max RPM: 12000 rpm

- Max RCF: 15520 g
- RCF/RPM conversion
- Program memory: 100

- Sequential MIST generation

- Temp: ~ 1000 °C

- Materials for Epitaxy: Gallium oxide, aluminum oxide,  iridium oxide and other oxide materials

- Voltage: ~1100 V
- Current: ~1.00 A

- 0.012% basic measure accuracy with 6.5 digit resolution, 1700 readings/second at 4.5 digits via GPIB

- DC Current-Voltage (I-V): 0.2 µV ~ 210 V,10 aA ~ 1A

- Capacitance-Voltage (C-V): 1 kHz - 10 MHz, ± 30V DC bias

- 1 kHz frequency resolution (1 kHz~10 MHz)

- Pulsed I-V: ±40 V (80 V p-p), ±800 mA, 200 MSa/sec, 5 ns sampling rate

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- Base pressure: 1 x 10⁻⁶ Torr
- Source: 1 theraml boat, 3 e-beam crucible
- Sub. Heat: ~650 °C
- Cooling sub.: for polymer films  
- Materials: Pt, Au, Ag, Ti, Al, Cr

- Optical power meter

- Model: Economical Handheld Laser Power Meter, 843-R

- Measurement Power: pJ, pW ~thousands of Watts

- Spin coater

- Hot plate x 2

- Mentle

- Wavelength: 185, 254nm

- Size: up to 8" wafer

- Base pressure : 1 x 10⁻⁶ Torr

- Source : DC power

- Targets : 2" Ti, Mo, W, Ag, ITO, IGZO

- Measurement: I-V, C-V

- Hot chuck : R.T. - 300 °C

- 4 manipulators

- Measurement Temperature : 300K, 77K (Liquid Nitrogen)

- Sample Size : Max. 6mm × 6mm